Consider a situation in which reverse biased current of a particular \(P-N\) junction increase when it is exposed to a l…

Consider a situation in which reverse biased current of a particular \(P-N\) junction increase when it is exposed to a light of wavelength ≤ 621 nm. During this process, enhancement in carrier concentration takes place due to generation of hole-electron pairs. The value of band gap is nearly

[JEE Main 2021, 22 Jul (Shift 2)]