Semiconductor Electronics: Materials, Devices and Simple Circuits

Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R.

Assertion A: A diode under reverse-biased condition provides very small current which is nearly independent of voltage until a critical limit at which the current increases drastically.

Reason R: Below the critical voltage limit, only majority charge carriers flow which increases drastically above critical voltage.

Choose the correct answer from the options given below.

[04 April, 2026 (Shift-2)]

An AND gate is followed by a NOT gate. If the inputs to the AND gate are A and B, determine the final output of the circuit in terms of A and B.

(Shift - II Memory based)

Consider a n-type semiconductor in which \({n}_{e}\) and \({\mathrm{n}}_{\mathrm{h}}\) are number of electrons and holes, respectively.
(A) Holes are minority carriers
(B) The dopant is a pentavalent atom
(C) \({\mathrm{n}}_{\mathrm{e}}{\mathrm{n}}_{\mathrm{h}}\neq {\mathrm{n}}_{\mathrm{i}}^{2}\)
(where \({n}_{i}\) is number of electrons or holes in semiconductor when it is intrinsic form)
(D) \({\mathrm{n}}_{\mathrm{e}}{\mathrm{n}}_{\mathrm{h}}\geq {\mathrm{n}}_{\mathrm{i}}^{2}\)
(E) The holes are not generated due to the donors
Choose the correct answer from the options given below :

[JEE Main 2025, 4 Apr (Shift 2)]

In a semiconductor p-n diode, the doping concentrations on p -side and n -side are 10¹⁵ atoms/cm³ and \({10}^{18}\text{ atoms }/{\mathrm{cm}}^{3}\), respectively.
Which one of the following statements is true?

[JEE Main 2026, 5 Apr (Shift 2)]

Consider the following statements:
A. The junction area of solar cell is made very narrow compared to a photo diode.
B. Solar cells are not connected with any external bias.
C. LED is made of lightly doped p-n junction.
D. Increase of forward current results in continuous increase of LED light intensity.
E. LEDs have to be connected in forward bias for emission of light.
Choose the correct answer from the options given below:

The acceptor level of a p-type semiconductor is \(6 eV\). The maximum wavelength of light which can create a hole would be : Given \(hc =1242 eV nm\).

[JEE Main 2024, 6 Apr (Shift 2)]

The acceptor level of a p-type semiconductor is \(6 eV\). The maximum wavelength of light which can create a hole would be : Given \(hc =1242 eV nm\).

The Boolean expression \(\mathrm{Y}=\mathrm{A}\overset{¯}{\mathrm{B}}\mathrm{C}+\overset{¯}{\mathrm{A}}\overset{¯}{\mathrm{C}}\) can be realised with which of the following gate configurations.
A. One 3-input AND gate, 3 NOT gates and one 2input OR gate, One 2-input AND gate,
B. One 3-input AND gate, 1 NOT gate, One 2input NOR gate and one 2-input OR gate
C. 3-input OR gate, 3 NOT gates and one 2-input AND gate
Choose the correct answer from the options given below

[JEE Main 2025, 4 Apr (Shift 1)]

Consider the following statements:
A. The junction area of solar cell is made very narrow compared to a photo diode.
B. Solar cells are not connected with any external bias.
C. LED is made of lightly doped p-n junction.
D. Increase of forward current results in continuous increase of LED light intensity.
E. LEDs have to be connected in forward bias for emission of light.
Choose the correct answer from the options given below:

[JEE Main 2025, 24 Jan (Shift 1)]

The acceptor level of a p-type semiconductor is \(6 eV\). The maximum wavelength of light which can create a hole would be : Given \(hc =1242 eV nm\).

[JEE Main 2024, 6 Apr (Shift 2)]

An AND gate is followed by a NOT gate. If the inputs to the AND gate are A and B, determine the final output of the circuit in terms of A and B.

(Shift - II Memory based)

Zener breakdown occurs in a \(P-n\) junction having P and n both:

[JEE Main 2021, 24 Feb (Shift 2)]

Consider a situation in which reverse biased current of a particular \(P-N\) junction increase when it is exposed to a light of wavelength ≤ 621 nm. During this process, enhancement in carrier concentration takes place due to generation of hole-electron pairs. The value of band gap is nearly

[JEE Main 2021, 22 Jul (Shift 2)]

Given below are two statements.

Statement - I: When a Si sample is doped with Boron, it becomes P type and when doped by Arsenic it becomes N-type semi conductor such that P-type has excess of holes and N-type has excess of electrons.

Statement - II: When such P-type and N-type semiconductors, are fused to make a junction, a current will automatically flow which can be detected with an externally connected ammeter.

In light of the above statements, choose the most appropriate answer from the options given below.

[JEE Main 2023, 25 Jan (Shift 2)]

Which one of the following statement is not correct in the case of light emitting diodes?

A. It is a heavily doped p-n junction.

B. It emits light only when it is forward biased.

C. It emits light only when it is reverse biased.

D. The energy of the light emitted is equal to or slightly less than the energy gap of the semiconductor used.

Choose the correct answer from the options given below:

[JEE Main 2023, 29 Jan (Shift 1)]

Statement - I:
To get a steady dc output from the pulsating voltage received from a full wave rectifier we can connect a capacitor across the output parallel to the load \(R_{L}\).
Statement - II:
To get a steady dc output from the pulsating voltage received from a full wave rectifier we can connect an inductor in series with \(R_{L}\).
In the light of the above statements, choose the most appropriate answer from the options given below:

[JEE Main 2021, 31 Aug (Shift 2)]

Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R:

Assertion A: Photodiodes are preferably operated in reverse bias condition for light intensity measurement.

Reason R: The current in the forward bias is more than the current in the reverse bias for a p – n junction diode.

In the light of the above statements, choose the correct answer from the options given below:

[JEE Main, 24 Jan, 2023 (Shift-I)]

Given below are two statements:

Statement I : \( P-N \) junction diodes can be used to function as transistor, simply by connecting two diodes, back to back, which acts as the base terminal.

Statement II : In the study of transistor, the amplification factor \( \beta \) indicates ratio of the collector current to the base current. In the light of the above statements, choose the correct answer from the options given below.

Which of the following statement is not correct in the case of light emitting diodes?
A. It is a heavily doped \(\mathrm{p}-\mathrm{n}\) junction.
B. It emits light only when it is forward biased.
C. It emits light only when it is reverse biased.
D. The energy of the light emitted is equal to or slightly less than the energy gap of the semiconductor used. Choose the correct answer from the options given below:

[JEE Main 2023, 29 Jan (Shift 1)]

Given below are two statements: one is labeled as Assertion (A) and the other is labeled as Reason (R)
Assertion (A): Photodiodes are used in forward bias usually for measuring the light intensity.
Reason (R): For a p-n junction diode, at applied voltage V the current in the forward bias is more than the current in the reverse bias for \(\left|{V}_{2}\right|>\pm \mathrm{V}\geq \left|{V}_{0}\right|\) where \({V}_{0}\) is the threshold voltage and \({V}_{z}\) is the breakdown voltage.

[JEE Main 2023, 25 Jan (Shift 1)]

Statement-I: By doping silicon semiconductor with pentavalent material, the electrons density increases.
Statement-II: The n-type semiconductor has net negative charge.

In the light of the above statements, choose the most appropriate answer from the options given below:

[JEE Main 2021, 26 Aug (Shift 1)]

Given below are two statements: one is labelled as Assertion (A) and the other is labelled as Reason (R)
Assertion (A): Photodiodes are preferably operated in reverse bias condition for light intensity measurement.
Reason (R): The current in the forward bias is more than the current in the reverse bias for a \(p-n\) junction diode.
In the light of the above statement, choose the correct answer from the options given below:

[JEE Main 2023, 24 Jan (Shift 1)]

For extrinsic semiconductors; when doping level is increased;

[JEE Main 2021, 25 Feb (Shift 2)]

Match List I with List II :

Choose the correct answer from the options given below :

[JEE Main 2023, 1 Feb (Shift 1)]

Consider the following statements (I) and (II) and identify the correct answer
(I) A zener diode is connected in reverse bias, when used as a voltage regulator.
(II) The potential barrier of \(p - n\) junction lies between \(0.1\ V\) to \(0.3\ V\) for diode.

[NEET 2021]

Choose the correct statement about Zener diode:

[JEE Main 2023, 1 Feb (Shift 2)]

Given below are two statements:
Statement-I: In a typical transistor, all three regions emitter, base and collector have same doping level.
Statement-II: In a transistor, collector is the thickest and base is the thinnest segment.
In the light of the above statements, choose the most appropriate answer from the options given below.

[JEE Main 2023, 31 Jan (Shift 2)]

The correct relation between \( \alpha \) (ratio of collector current to emitter current) and \( \beta \) (ratio of collector current to base current) of a transistor is:

[JEE Main 2021, 18 Mar (Shift 2)]

Statement-I: By doping silicon semiconductor with pentavalent material, the electron density increases.
Statement-II: The n-type semiconductor has net negative charge.

In the light of the above statements, choose the most appropriate answer from the options given below:

[JEE Main 2021, 26 Aug (Shift 1)]

Given below are two statements: one is labelled as Assertion (A) and the other is labelled as Reason (R)
Assertion (A): Photodiodes are used in forward bias usually for measuring the light intensity.
Reason (R): For a p - n junction diode, at applied voltage V the current in the forward bias is more than the current in the reverse bias for \(|\mathrm{Vz}|>\pm \mathrm{V}\geq \left|{\mathrm{V}}_{0}\right|\) where V₀ is the threshold voltage and V_z is the breakdown voltage.In the light of the above statements, Choose the correct answer from the options given below:

[JEE Main 2023, 25 Jan (Shift 1)]