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In a semiconductor p-n diode, the doping concentrations on p -side and n -side are 10¹⁵ atoms/cm³ and \({10}^{18}\text{ …

Q1

In a semiconductor p-n diode, the doping concentrations on p -side and n -side are 10¹⁵ atoms/cm³ and \({10}^{18}\text{ atoms }/{\mathrm{cm}}^{3}\), respectively.
Which one of the following statements is true?

[JEE Main 2026, 5 Apr (Shift 2)]

a

Widths of depletion region on either side of the interface are equal

b

The depletion region width is more on p-side compared to n-side

c

The depletion region width is more on n-side compared to p-side

d

No depletion region forms because of unequal doping concentrations

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