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In the energy-band diagram of n-type Si semiconductor, the gap between the bottom of the conduction band \(E_C\) and the…

Q1

In the energy-band diagram of n-type Si semiconductor, the gap between the bottom of the conduction band \(E_C\) and the donor energy level \(E_D\) is of the order of:

a

\(10\text{ eV}\)

b

\(1\text{ eV}\)

c

\(0.1\text{ eV}\)

d

\(0.01\text{ eV}\)

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