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At a certain temperature in an intrinsic semiconductor, the electrons and holes concentration is \(1.5 \times 10^{16} m …

Q1

At a certain temperature in an intrinsic semiconductor, the electrons and holes concentration is \(1.5 \times 10^{16} m ^{-3}\). When it is doped with a trivalent dopant, hole concentration increases to \(4.5 \times 10^{22} m ^{-3}\). In the doped semiconductor, the concentration of electrons \(\left( n _{ e }\right)\) will be :

a

\(3 \times 10^6 m ^{-3}\)

b

\(5 \times 10^7 m ^{-3}\)

c

\(5 \times 10^9 m ^{-3}\)

d

\(6.75 \times 10^{38} m ^{-3}\)

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