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Consider a situation in which reverse biased current of a particular \(P-N\) junction increase when it is exposed to a l…

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Consider a situation in which reverse biased current of a particular \(P-N\) junction increase when it is exposed to a light of wavelength ≤ 621 nm. During this process, enhancement in carrier concentration takes place due to generation of hole-electron pairs. The value of band gap is nearly.

a

\(1 eV\)

b

\(4 eV\)

c

\(0.5 eV\)

d

\(2 eV\)

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